{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466066","patent":{"patent_number":"US-8466066","title":"Method for forming micro-pattern in semiconductor device","assignee":null,"inventors":[],"filing_date":"2009-06-27T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"A method for forming a micro-pattern in a semiconductor device includes forming a hard mask layer and a sacrificial layer over an etch target layer, forming a plurality of openings having a hole shape in the sacrificial layer, forming spacers over inner sidewalls of the openings to form first hole patterns inside the openings, etching the sacrificial layer outside of the sidewalls of the openings using the spacers in a manner that the sacrificial layer in a first area remains partially and the sacrificial layer in a second area is removed to form second hole patterns, wherein the first area is smaller than the second area, and etching the hard mask layer using the remaining sacrificial layer and the spacers including the first and second hole patterns."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming micro-pattern in semiconductor device","description":"A method for forming a micro-pattern in a semiconductor device includes forming a hard mask layer and a sacrificial layer over an etch target layer, forming a plurality of openings having a hole shape","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466066","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466066","citation_suggestion":"Patentable. \"Method for forming micro-pattern in semiconductor device\" (US-8466066). https://patentable.app/patents/US-8466066","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466066","json":"https://patentable.app/api/llm-context/US-8466066","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:37:18.151Z"}