{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466069","patent":{"patent_number":"US-8466069","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-09-14T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can form a plurality of grooves extending in a first direction on a semiconductor substrate. The method can form an insulating layer on the inner face of the groove and on the top face of the semiconductor substrate. The method can deposit a first conductive layer on the insulating layer so as to fill in the groove. The method can deposit a second conductive layer on the first conductive layer. The method can form a hard mask in a region including part of a region immediately above the groove on the second conductive layer. The method can form a columnar body including the hard mask and the second conductive layer by etching the second conductive layer using the hard mask as a mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can form a plurality of grooves extending in a first direction on a semiconductor substrate. The","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466069","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466069","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-8466069). https://patentable.app/patents/US-8466069","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466069","json":"https://patentable.app/api/llm-context/US-8466069","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:11:30.999Z"}