{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466503","patent":{"patent_number":"US-8466503","title":"Semiconductor transistors with expanded top portions of gates","assignee":null,"inventors":[],"filing_date":"2008-08-11T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"A semiconductor transistor with an expanded top portion of a gate and a method for forming the same. The semiconductor transistor with an expanded top portion of a gate includes (a) a semiconductor region which includes a channel region and first and second source/drain regions; the channel region is disposed between the first and second source/drain regions, (b) a gate dielectric region in direct physical contact with the channel region, and (c) a gate electrode region which includes a top portion and a bottom portion. The bottom portion is in direct physical contact with the gate dielectric region. A first width of the top portion is greater than a second width of the bottom portion. The gate electrode region is electrically insulated from the channel region by the gate dielectric region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor transistors with expanded top portions of gates","description":"A semiconductor transistor with an expanded top portion of a gate and a method for forming the same. The semiconductor transistor with an expanded top portion of a gate includes (a) a semiconductor re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466503","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466503","citation_suggestion":"Patentable. \"Semiconductor transistors with expanded top portions of gates\" (US-8466503). https://patentable.app/patents/US-8466503","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466503","json":"https://patentable.app/api/llm-context/US-8466503","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:17:50.564Z"}