{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466509","patent":{"patent_number":"US-8466509","title":"Semiconductor device having a contact plug connecting to a silicide film formed on a diffusion region of a flash memory cell","assignee":null,"inventors":[],"filing_date":"2008-01-14T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","G11C","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"The present invention provides a method for manufacturing a semiconductor device including the steps of forming a flash memory cell provided with a floating gate, an intermediate insulating film, and a control gate, forming first and second impurity diffusion regions, thermally oxidizing surfaces of a silicon substrate and the floating gate, etching a tunnel insulating film in a partial region through a window of a resist pattern; forming a metal silicide layer on the first impurity diffusion region in the partial region, forming an interlayer insulating film covering the flash memory cell, and forming, in a first hole of the interlayer insulating film, a conductive plug connected to the metal silicide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having a contact plug connecting to a silicide film formed on a diffusion region of a flash memory cell","description":"The present invention provides a method for manufacturing a semiconductor device including the steps of forming a flash memory cell provided with a floating gate, an intermediate insulating film, and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466509","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466509","citation_suggestion":"Patentable. \"Semiconductor device having a contact plug connecting to a silicide film formed on a diffusion region of a flash memory cell\" (US-8466509). https://patentable.app/patents/US-8466509","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466509","json":"https://patentable.app/api/llm-context/US-8466509","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:27:03.596Z"}