{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466517","patent":{"patent_number":"US-8466517","title":"Capacitorless DRAM on bulk silicon","assignee":null,"inventors":[],"filing_date":"2012-04-12T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate is provided, and an array of silicon studs is defined within the silicon substrate. An insulator layer is defined atop at least a portion of the silicon substrate, and between the silicon studs. A silicon-over-insulator layer is defined surrounding the silicon studs atop the insulator layer, and a capacitorless DRAM is formed within and above the silicon-over-insulator layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Capacitorless DRAM on bulk silicon","description":"A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate is provided, and an array of silicon studs is defined within the silicon s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466517","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466517","citation_suggestion":"Patentable. \"Capacitorless DRAM on bulk silicon\" (US-8466517). https://patentable.app/patents/US-8466517","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466517","json":"https://patentable.app/api/llm-context/US-8466517","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:13:06.865Z"}