{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8466518","patent":{"patent_number":"US-8466518","title":"Semiconductor device and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2011-05-02T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device manufacturing method includes forming a first stopper film and a second stopper film over a first stress film; etching, with a first mask covering a first region and with the first stopper film, the second stopper film in a second region while side-etching the second stopper film in a part of the first region near the second region; forming a second stress film whose etching characteristic is different from the second stopper film; etching, with a second mask covering the second region and having an end face located over the second stopper film and with the second stopper film, the second stress film so that a part of the second stress film overlaps a part of the first stress film and a part of the second stopper film; and forming a contact hole down to the gate interconnect."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device manufacturing method","description":"A semiconductor device manufacturing method includes forming a first stopper film and a second stopper film over a first stress film; etching, with a first mask covering a first region and with the fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8466518","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8466518","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device manufacturing method\" (US-8466518). https://patentable.app/patents/US-8466518","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8466518","json":"https://patentable.app/api/llm-context/US-8466518","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:55:06.841Z"}