{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8467240","patent":{"patent_number":"US-8467240","title":"Integrated circuits with nonvolatile memory elements","assignee":null,"inventors":[],"filing_date":"2012-01-17T00:00:00.000Z","publication_date":"2013-06-18T00:00:00.000Z","cpc_codes":["G11C","G11C","H01L","H01L","H01L"],"num_claims":20,"abstract":"Nonvolatile memory element circuitry is provided that is based on metal-oxide-semiconductor transistor structures. A nonvolatile memory element may be based on a metal-oxide-semiconductor transistor structure that has a gate, a drain, a source, and a body. During programming operations, control circuitry floats the body while applying a positive voltage to the drain and a negative voltage to the source. This causes the drain and source, which serve as the collector and emitter in a parasitic bipolar transistor, to break down. The drain-to-source (collector-to-emitter) breakdown causes sufficient current to flow through the source to alter the source electrode and thereby increase the resistance of the source significantly. During sensing operations, control circuitry may apply a voltage across the drain and source while grounding the body to determine whether the memory element has been programmed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuits with nonvolatile memory elements","description":"Nonvolatile memory element circuitry is provided that is based on metal-oxide-semiconductor transistor structures. A nonvolatile memory element may be based on a metal-oxide-semiconductor transistor s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8467240","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8467240","citation_suggestion":"Patentable. \"Integrated circuits with nonvolatile memory elements\" (US-8467240). https://patentable.app/patents/US-8467240","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8467240","json":"https://patentable.app/api/llm-context/US-8467240","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:48:26.103Z"}