{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470091","patent":{"patent_number":"US-8470091","title":"SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device","assignee":null,"inventors":[],"filing_date":"2010-01-21T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device","description":"A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470091","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470091","citation_suggestion":"Patentable. \"SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device\" (US-8470091). https://patentable.app/patents/US-8470091","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470091","json":"https://patentable.app/api/llm-context/US-8470091","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:56:53.198Z"}