{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470189","patent":{"patent_number":"US-8470189","title":"Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element","assignee":null,"inventors":[],"filing_date":"2008-06-03T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["G11B","B82Y","B82Y","G11B","G11B"],"num_claims":19,"abstract":"In the present invention, provided is a method of forming a mask pattern by which a fine thin film pattern may be formed more easily with higher resolution and precision. In the method of forming a mask pattern, a photoresist pattern having an opening is formed on a substrate, then, an inorganic film is formed so as to cover the upper surface of the photoresist pattern and the inside of the opening, then the inorganic film on the upper surface of the photoresist pattern is removed by a dry etching process. Subsequently, an inorganic mask pattern is formed by removing the photoresist pattern. The inorganic mask pattern thus formed hardly produces an issue of deformation such as physical displacement even when it is heated in the dry etching process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element","description":"In the present invention, provided is a method of forming a mask pattern by which a fine thin film pattern may be formed more easily with higher resolution and precision. In the method of forming a ma","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470189","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470189","citation_suggestion":"Patentable. \"Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element\" (US-8470189). https://patentable.app/patents/US-8470189","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470189","json":"https://patentable.app/api/llm-context/US-8470189","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:08:30.673Z"}