{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470402","patent":{"patent_number":"US-8470402","title":"Method of depositing a metal-containing dielectric film","assignee":null,"inventors":[],"filing_date":"2011-01-20T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0≦a<1, 0<b≦3, 0≦c≦1, M1 represents a metal selected from (Hf) or (Zr); and M2 represents a metal atom. The method generally uses an M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, or Hf(tBu2Cp)(NMe2)3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of depositing a metal-containing dielectric film","description":"Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0≦a<1, 0<b≦3, 0≦c≦1, M1 represent","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470402","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470402","citation_suggestion":"Patentable. \"Method of depositing a metal-containing dielectric film\" (US-8470402). https://patentable.app/patents/US-8470402","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470402","json":"https://patentable.app/api/llm-context/US-8470402","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:57:06.308Z"}