{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470614","patent":{"patent_number":"US-8470614","title":"PECVD showerhead configuration for CMP uniformity and improved stress","assignee":null,"inventors":[],"filing_date":"2011-10-28T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a flow rate per unit area from a central region of the showerhead. The edge band extends at least one half inch from an outer edge of the showerhead up to one fourth of the diameter of the wafer. A process of forming an integrated circuit by forming a silicon dioxide layer on a wafer containing the integrated circuit using the dielectric deposition tool. The silicon dioxide layer is thicker under the edge band than under the central region. A subsequent CMP operation reduces the thickness difference between the wafer outer annulus and the wafer core by at least half. The silicon dioxide layer has a compressive stress between 125 and 225 MPa."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"PECVD showerhead configuration for CMP uniformity and improved stress","description":"A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470614","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470614","citation_suggestion":"Patentable. \"PECVD showerhead configuration for CMP uniformity and improved stress\" (US-8470614). https://patentable.app/patents/US-8470614","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470614","json":"https://patentable.app/api/llm-context/US-8470614","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:07:37.446Z"}