{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470647","patent":{"patent_number":"US-8470647","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2007-01-05T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470647","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470647","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-8470647). https://patentable.app/patents/US-8470647","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470647","json":"https://patentable.app/api/llm-context/US-8470647","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:55:58.672Z"}