{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470657","patent":{"patent_number":"US-8470657","title":"Ion implantation method for semiconductor sidewalls","assignee":null,"inventors":[],"filing_date":"2012-06-25T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"An ion implantation method for semiconductor sidewalls includes steps of: forming a trench on a substrate, and the trench having a lower reflecting layer and two sidewalls adjacent to a bottom section; performing a plasma doping procedure to sputter conductive ions to the lower reflecting layer and the conductive ions being rebounded from the lower reflecting layer to adhere to the sidewalls to respectively form an adhesion layer thereon; and performing an annealing procedure to diffuse the conductive ions of the adhesion layer into the substrate to form a conductive segment. Thus, without damaging the substrate, the conductive segment having a high conductive ion doping concentration is formed at a predetermined region to satisfy semiconductor design requirements."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ion implantation method for semiconductor sidewalls","description":"An ion implantation method for semiconductor sidewalls includes steps of: forming a trench on a substrate, and the trench having a lower reflecting layer and two sidewalls adjacent to a bottom section","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470657","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470657","citation_suggestion":"Patentable. \"Ion implantation method for semiconductor sidewalls\" (US-8470657). https://patentable.app/patents/US-8470657","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470657","json":"https://patentable.app/api/llm-context/US-8470657","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:27:33.571Z"}