{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470661","patent":{"patent_number":"US-8470661","title":"High-K gate electrode structure formed after transistor fabrication by using a spacer","assignee":null,"inventors":[],"filing_date":"2009-11-24T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":15,"abstract":"During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-K gate electrode structure formed after transistor fabrication by using a spacer","description":"During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470661","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470661","citation_suggestion":"Patentable. \"High-K gate electrode structure formed after transistor fabrication by using a spacer\" (US-8470661). https://patentable.app/patents/US-8470661","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470661","json":"https://patentable.app/api/llm-context/US-8470661","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:52:02.644Z"}