{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470679","patent":{"patent_number":"US-8470679","title":"Semiconductor device including a deep contact and a method of manufacturing such a device","assignee":null,"inventors":[],"filing_date":"2010-06-07T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"A semiconductor device includes a buried layer and a deep contact for providing a low resistive connection to the buried layer. The deep contact is formed by doped polycrystalline silicon. A method of manufacturing a semiconductor device and a deep contact for providing a low resistive connection to the buried layer, with the steps of forming a buried layer, providing an active region adjacent the buried layer and forming a deep contact for providing a low resistive connection to the buried layer by patterning a contact shape for the deep contact on an upper surface of the active region, removing part of the active region underneath the contact shape to create a deep contact cavity. Subsequently a polycrystalline silicon layer for filling the deep contact cavity is deposited and doped."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a deep contact and a method of manufacturing such a device","description":"A semiconductor device includes a buried layer and a deep contact for providing a low resistive connection to the buried layer. The deep contact is formed by doped polycrystalline silicon. A method of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470679","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470679","citation_suggestion":"Patentable. \"Semiconductor device including a deep contact and a method of manufacturing such a device\" (US-8470679). https://patentable.app/patents/US-8470679","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470679","json":"https://patentable.app/api/llm-context/US-8470679","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:12:23.153Z"}