{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470690","patent":{"patent_number":"US-8470690","title":"Method for producing a multilayer film including at least one ultrathin layer of crystalline silicon, and devices obtained by means of said method","assignee":null,"inventors":[],"filing_date":"2010-10-15T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Method of fabricating a multilayer film having at least one ultrathin layer of crystalline silicon, the film being fabricated from a substrate having a crystalline structure and including a previously-cleaned surface. The method includes the steps of: a) exposing the cleaned surface to a radiofrequency plasma generated in a gaseous mixture of SiF4, hydrogen, and argon, so as to form an ultrathin layer of crystalline silicon having an interface sublayer in contact with the substrate and containing microcavities; b) depositing at least one layer of material on the ultrathin layer of crystalline silicon so as form a multilayer film, the multilayer film including at least one mechanically strong layer; and c) annealing the substrate covered in the multilayer film at a temperature higher than 400° C., thereby enabling the multilayer film to be separated from the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a multilayer film including at least one ultrathin layer of crystalline silicon, and devices obtained by means of said method","description":"Method of fabricating a multilayer film having at least one ultrathin layer of crystalline silicon, the film being fabricated from a substrate having a crystalline structure and including a previously","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470690","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470690","citation_suggestion":"Patentable. \"Method for producing a multilayer film including at least one ultrathin layer of crystalline silicon, and devices obtained by means of said method\" (US-8470690). https://patentable.app/patents/US-8470690","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470690","json":"https://patentable.app/api/llm-context/US-8470690","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:46:44.681Z"}