{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470693","patent":{"patent_number":"US-8470693","title":"Method for manufacturing quantum dot","assignee":null,"inventors":[],"filing_date":"2008-03-31T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L"],"num_claims":5,"abstract":"A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the silicon oxide film (2)/the substrate (1) is set on an RTA apparatus. The sample (=the silicon oxide film (2)/the substrate (1)) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing quantum dot","description":"A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470693","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470693","citation_suggestion":"Patentable. \"Method for manufacturing quantum dot\" (US-8470693). https://patentable.app/patents/US-8470693","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470693","json":"https://patentable.app/api/llm-context/US-8470693","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:32:27.537Z"}