{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470699","patent":{"patent_number":"US-8470699","title":"Method of manufacturing silicon carbide semiconductor apparatus","assignee":null,"inventors":[],"filing_date":"2009-11-09T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":6,"abstract":"Disclosed is a method of manufacturing a silicon carbide semiconductor apparatus which provides a smooth silicon carbide surface while maintaining a high impurity activation ratio. The method of manufacturing a silicon carbide semiconductor apparatus which forms an impurity region in the surface layer of a silicon carbide substrate includes the steps of implanting an impurity into the surface layer of the silicon carbide substrate, forming a carbon film on the surface of the silicon carbide substrate, preliminarily heating the silicon carbide substrate with the carbon film as a protective film, and thermally activating the silicon carbide substrate with the carbon film as a protective film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing silicon carbide semiconductor apparatus","description":"Disclosed is a method of manufacturing a silicon carbide semiconductor apparatus which provides a smooth silicon carbide surface while maintaining a high impurity activation ratio. The method of manuf","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470699","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470699","citation_suggestion":"Patentable. \"Method of manufacturing silicon carbide semiconductor apparatus\" (US-8470699). https://patentable.app/patents/US-8470699","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470699","json":"https://patentable.app/api/llm-context/US-8470699","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:42:05.165Z"}