{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470700","patent":{"patent_number":"US-8470700","title":"Semiconductor device with reduced contact resistance and method of manufacturing thereof","assignee":null,"inventors":[],"filing_date":"2010-07-22T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method (and semiconductor device) of fabricating a semiconductor device provides a filed effect transistor (FET) with reduced contact resistance (and series resistance) for improved device performance. An impurity is implanted in the source/drain (S/D) regions after contact silicide formation and a spike anneal process is performed that lowers the schottky barrier height (SBH) of the interface between the silicide and the lower junction region of the S/D regions. This results in lower contact resistance and reduces the thickness (and Rs) of the region at the silicide-semiconductor interface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with reduced contact resistance and method of manufacturing thereof","description":"A method (and semiconductor device) of fabricating a semiconductor device provides a filed effect transistor (FET) with reduced contact resistance (and series resistance) for improved device performan","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470700","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470700","citation_suggestion":"Patentable. \"Semiconductor device with reduced contact resistance and method of manufacturing thereof\" (US-8470700). https://patentable.app/patents/US-8470700","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470700","json":"https://patentable.app/api/llm-context/US-8470700","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T22:30:47.204Z"}