{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8470713","patent":{"patent_number":"US-8470713","title":"Nitride etch for improved spacer uniformity","assignee":null,"inventors":[],"filing_date":"2010-12-13T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming dielectric spacers including providing a substrate comprising a first region having a first plurality of gate structures and a second region having a second plurality of gate structures and at least one oxide containing material or a carbon containing material. Forming a nitride containing layer over the first region having a thickness that is less than the thickness of the nitride containing layer that is present in the second region. Forming dielectric spacers from the nitride containing layer on the first plurality the second plurality of gate structures. The at least one oxide containing material or carbon containing material accelerates etching in the second region so that the thickness of the dielectric spacers in the first region is substantially equal to the thickness of the dielectric spacers in the second region of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride etch for improved spacer uniformity","description":"A method of forming dielectric spacers including providing a substrate comprising a first region having a first plurality of gate structures and a second region having a second plurality of gate struc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8470713","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8470713","citation_suggestion":"Patentable. \"Nitride etch for improved spacer uniformity\" (US-8470713). https://patentable.app/patents/US-8470713","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8470713","json":"https://patentable.app/api/llm-context/US-8470713","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:35:53.607Z"}