{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471232","patent":{"patent_number":"US-8471232","title":"Resistive memory devices including vertical transistor arrays and related fabrication methods","assignee":null,"inventors":[],"filing_date":"2010-03-16T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A resistive memory device includes a vertical transistor and a variable resistance layer. The vertical transistor includes a gate electrode on a surface of a substrate, a gate insulation layer extending along a sidewall of the gate electrode, and a single crystalline silicon layer on the surface of the substrate adjacent to the gate insulation layer. At least a portion of the single crystalline silicon layer defines a channel region that extends in a direction substantially perpendicular to the surface of the substrate. The variable resistance layer is provided on the single crystalline silicon layer. The variable resistance layer is electrically insulated from the gate electrode. Related devices and fabrication methods are also discussed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive memory devices including vertical transistor arrays and related fabrication methods","description":"A resistive memory device includes a vertical transistor and a variable resistance layer. The vertical transistor includes a gate electrode on a surface of a substrate, a gate insulation layer extendi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471232","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471232","citation_suggestion":"Patentable. \"Resistive memory devices including vertical transistor arrays and related fabrication methods\" (US-8471232). https://patentable.app/patents/US-8471232","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471232","json":"https://patentable.app/api/llm-context/US-8471232","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:47:51.458Z"}