{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471267","patent":{"patent_number":"US-8471267","title":"Semiconductor device and method for producing same","assignee":null,"inventors":[],"filing_date":"2010-08-26T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":11,"abstract":"A semiconductor device of the present invention has a semiconductor element region 17 that is provided in part of a silicon carbide layer 3 and a guard-ring region 18 that is provided in another part of the silicon carbide layer 3 surrounding the semiconductor element region 17 when seen in a direction perpendicular to a principal surface of the silicon carbide layer 3. The semiconductor device includes: an interlayer insulation film 10 which is provided on the principal surface of the silicon carbide layer 3 in the semiconductor element region 17 and the guard-ring region 18, the interlayer insulation film 10 having a relative dielectric constant of 20 or more; a first protective insulation film 14 provided on the interlayer insulation film in the guard-ring region 18; and a second protective insulation film 15 provided on the first protective insulation film 14, wherein the first protective insulation film 14 has a linear expansion coefficient which is between a linear expansion coefficient of a material of the second protective insulation film 15 and a linear expansion coefficient of a material of the interlayer insulation film 10. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for producing same","description":"A semiconductor device of the present invention has a semiconductor element region 17 that is provided in part of a silicon carbide layer 3 and a guard-ring region 18 that is provided in another part ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471267","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471267","citation_suggestion":"Patentable. \"Semiconductor device and method for producing same\" (US-8471267). https://patentable.app/patents/US-8471267","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471267","json":"https://patentable.app/api/llm-context/US-8471267","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:02.662Z"}