{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471288","patent":{"patent_number":"US-8471288","title":"Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer","assignee":null,"inventors":[],"filing_date":"2010-09-14T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"A Group III nitride semiconductor light-emitting device includes a support, a p-electrode provided on the support, a p-type layer including a Group III nitride semiconductor and provided on the p-electrode, an active layer including a Group III nitride semiconductor and provided on the p-type layer, an n-type layer including a Group III nitride semiconductor and provided on the active layer, an n-electrode which is connected to the n-type layer, a first trench having a depth extending from a back surface of the p-type layer on a side of the p-electrode to reach the n-type layer, an auxiliary electrode which is in contact with a back surface of the n-type layer at a bottom of the first trench, but is not in contact with side walls of the first trench, and an insulating film which exhibits light permeability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer","description":"A Group III nitride semiconductor light-emitting device includes a support, a p-electrode provided on the support, a p-type layer including a Group III nitride semiconductor and provided on the p-elec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471288","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471288","citation_suggestion":"Patentable. \"Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer\" (US-8471288). https://patentable.app/patents/US-8471288","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471288","json":"https://patentable.app/api/llm-context/US-8471288","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:37:20.007Z"}