{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471326","patent":{"patent_number":"US-8471326","title":"Semiconductor memory device and manufacturing method of semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2011-03-16T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"According to one embodiment, a semiconductor substrate includes a cell region and a peripheral circuit region, a first dielectric film is formed on the semiconductor substrate in the cell region and the peripheral circuit region, a first conductive film is formed on the first dielectric film in the cell region and the peripheral circuit region, a first inter-conductive-film dielectric film is formed on the first conductive film in the cell region, a second inter-conductive-film dielectric film is formed on the first conductive film in the peripheral circuit region and a film thickness thereof is larger than the first inter-conductive-film dielectric film, and a second conductive film is formed on the first inter-conductive-film dielectric film in the cell region and the second inter-conductive-film dielectric film in the peripheral circuit region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and manufacturing method of semiconductor memory device","description":"According to one embodiment, a semiconductor substrate includes a cell region and a peripheral circuit region, a first dielectric film is formed on the semiconductor substrate in the cell region and t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471326","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471326","citation_suggestion":"Patentable. \"Semiconductor memory device and manufacturing method of semiconductor memory device\" (US-8471326). https://patentable.app/patents/US-8471326","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471326","json":"https://patentable.app/api/llm-context/US-8471326","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:59:48.170Z"}