{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471351","patent":{"patent_number":"US-8471351","title":"Solid state imaging device including source/drain region of amplifier transistor being disposed in isolation diffusion layer","assignee":null,"inventors":[],"filing_date":"2011-08-04T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Solid state imaging device including source/drain region of amplifier transistor being disposed in isolation diffusion layer","description":"Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier tran","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471351","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471351","citation_suggestion":"Patentable. \"Solid state imaging device including source/drain region of amplifier transistor being disposed in isolation diffusion layer\" (US-8471351). https://patentable.app/patents/US-8471351","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471351","json":"https://patentable.app/api/llm-context/US-8471351","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:24:33.573Z"}