{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471362","patent":{"patent_number":"US-8471362","title":"Three-dimensional stacked structure semiconductor device having through-silicon via and signaling method for the semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-04-05T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","H01L","G11C","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A three-dimensional (3D) semiconductor device including a plurality of stacked layers and a through-silicon via (TSV) electrically connecting the plurality of layers, in which in signal transmission among the plurality of layers, the TSV transmits a signal that swings in a range from an offset voltage that is higher than a ground voltage to a power voltage, thereby minimizing an influence of a metal-oxide-semiconductor (MOS) capacitance of TSV."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional stacked structure semiconductor device having through-silicon via and signaling method for the semiconductor device","description":"A three-dimensional (3D) semiconductor device including a plurality of stacked layers and a through-silicon via (TSV) electrically connecting the plurality of layers, in which in signal transmission a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471362","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471362","citation_suggestion":"Patentable. \"Three-dimensional stacked structure semiconductor device having through-silicon via and signaling method for the semiconductor device\" (US-8471362). https://patentable.app/patents/US-8471362","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471362","json":"https://patentable.app/api/llm-context/US-8471362","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:34:56.176Z"}