{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471365","patent":{"patent_number":"US-8471365","title":"Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device","assignee":null,"inventors":[],"filing_date":"2010-07-09T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided. The nitride semiconductor substrate includes a main surface inclined at an angle of 71° or more and 79° or less with respect to the (0001) plane toward the [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to the (000-1) plane toward the [−1100] direction; and a chamfered portion located at an edge of an outer periphery of the main surface. The chamfered portion is inclined at an angle θ1 or θ2 of 5° or more and 45° or less with respect to adjacent one of the main surface and a backside surface on a side opposite to the main surface. Accordingly, cracking and chipping occurring from the edge of the outer periphery of the nitride semiconductor substrate can be effectively suppressed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device","description":"A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor devi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471365","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471365","citation_suggestion":"Patentable. \"Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device\" (US-8471365). https://patentable.app/patents/US-8471365","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471365","json":"https://patentable.app/api/llm-context/US-8471365","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:09:47.032Z"}