{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8471367","patent":{"patent_number":"US-8471367","title":"Semiconductor device and method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2010-11-01T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing semiconductor device","description":"A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8471367","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8471367","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing semiconductor device\" (US-8471367). https://patentable.app/patents/US-8471367","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8471367","json":"https://patentable.app/api/llm-context/US-8471367","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:36:01.553Z"}