{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8472151","patent":{"patent_number":"US-8472151","title":"TMR device with low magnetorestriction free layer","assignee":null,"inventors":[],"filing_date":"2012-04-11T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["G11B","B82Y","B82Y","G11B","G11B","G11C","G11B"],"num_claims":5,"abstract":"A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA<3 ohm-um2. In bilayer or trilayer embodiments, magnetostriction (λ) between −5×10−6 and 5×10−6 is achieved by combining CoB (−λ) and one or more layers having a positive λ."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"TMR device with low magnetorestriction free layer","description":"A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8472151","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8472151","citation_suggestion":"Patentable. \"TMR device with low magnetorestriction free layer\" (US-8472151). https://patentable.app/patents/US-8472151","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8472151","json":"https://patentable.app/api/llm-context/US-8472151","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:11:44.617Z"}