{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8472238","patent":{"patent_number":"US-8472238","title":"Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect","assignee":null,"inventors":[],"filing_date":"2012-06-27T00:00:00.000Z","publication_date":"2013-06-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":19,"abstract":"The variable resistance nonvolatile storage device includes a memory cell (300) that is formed by connecting in series a variable resistance element (309) including a variable resistance layer (309b) which reversibly changes based on electrical signals each having a different polarity and a transistor (317) including a semiconductor substrate (301) and two N-type diffusion layer regions (302a, 302b), wherein the variable resistance layer (309b) includes an oxygen-deficient oxide of a transition metal, lower and upper electrodes (309a, 309c) are made of materials of different elements, a standard electrode potential V1 of the lower electrode (309a), a standard electrode potential V2 of the upper electrode (309c), and a standard electrode potential Vt of the transition metal satisfy Vt<V2 and V1<V2, and the lower electrode (309a) is connected with the N-type diffusion layer region (302b), the electrical signals being applied between the lower and upper electrodes (309a, 309c)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect","description":"The variable resistance nonvolatile storage device includes a memory cell (300) that is formed by connecting in series a variable resistance element (309) including a variable resistance layer (309b) ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8472238","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8472238","citation_suggestion":"Patentable. \"Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect\" (US-8472238). https://patentable.app/patents/US-8472238","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8472238","json":"https://patentable.app/api/llm-context/US-8472238","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:29:15.432Z"}