{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8475674","patent":{"patent_number":"US-8475674","title":"High-temperature selective dry etch having reduced post-etch solid residue","assignee":null,"inventors":[],"filing_date":"2010-07-20T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-temperature selective dry etch having reduced post-etch solid residue","description":"Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduce","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8475674","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8475674","citation_suggestion":"Patentable. \"High-temperature selective dry etch having reduced post-etch solid residue\" (US-8475674). https://patentable.app/patents/US-8475674","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8475674","json":"https://patentable.app/api/llm-context/US-8475674","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:46:27.726Z"}