{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476086","patent":{"patent_number":"US-8476086","title":"Semiconductor device and method of its manufacture","assignee":null,"inventors":[],"filing_date":"2007-11-29T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"Method of high-yield manufacturing superior semiconductor devices includes: a step of preparing a GaN substrate having a ratio St/S—of collective area (St cm2) of inversion domains in, to total area (S cm2) of the principal face of, the GaN substrate—of no more than 0.5, with the density along the (0001) Ga face, being the substrate principal face, of inversion domains whose surface area where the polarity in the [0001] direction is inverted with respect to the principal domain (matrix) is 1 μm2 or more being D cm−2; and a step of growing on the GaN substrate principal face an at least single-lamina semiconductor layer to form semiconductor devices in which the product Sc×D of the area Sc of the device principal faces, and the density D of the inversion domains is made less than 2.3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of its manufacture","description":"Method of high-yield manufacturing superior semiconductor devices includes: a step of preparing a GaN substrate having a ratio St/S—of collective area (St cm2) of inversion domains in, to total area (","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476086","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476086","citation_suggestion":"Patentable. \"Semiconductor device and method of its manufacture\" (US-8476086). https://patentable.app/patents/US-8476086","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476086","json":"https://patentable.app/api/llm-context/US-8476086","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:14:16.707Z"}