{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476127","patent":{"patent_number":"US-8476127","title":"Integrated lateral high voltage MOSFET","assignee":null,"inventors":[],"filing_date":"2011-10-28T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"An integrated circuit containing a dual drift layer extended drain MOS transistor with an upper drift layer contacting a lower drift layer along at least 75 percent of a common length of the two drift layers. An average doping density in the lower drift layer is between 2 and 10 times an average doping density in the upper drift layer. A process of forming an integrated circuit containing a dual drift layer extended drain MOS transistor with a lower drift extension under the body region and an isolation link which electrically isolates the body region, using an epitaxial process. A process of forming an integrated circuit containing a dual drift layer extended drain MOS transistor with a lower drift extension under the body region and an isolation link which electrically isolates the body region, on a monolithic substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated lateral high voltage MOSFET","description":"An integrated circuit containing a dual drift layer extended drain MOS transistor with an upper drift layer contacting a lower drift layer along at least 75 percent of a common length of the two drift","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476127","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476127","citation_suggestion":"Patentable. \"Integrated lateral high voltage MOSFET\" (US-8476127). https://patentable.app/patents/US-8476127","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476127","json":"https://patentable.app/api/llm-context/US-8476127","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:17:07.072Z"}