{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476147","patent":{"patent_number":"US-8476147","title":"SOI substrate and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2011-01-31T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":32,"abstract":"A bond substrate is irradiated with ions, so that an embrittlement layer is formed, then, the bond substrate is bonded to a base substrate. Next, a part of a region of the bonded bond substrate is heated at a temperature higher than a temperature of the other part of the region of the bond substrate, or alternatively, a first heat treatment is performed on the bonded bond substrate as a whole at a first temperature; and a second heat treatment is performed on a part of a region of the bonded bond substrate at a second temperature higher than the first temperature, so that separation of the bond substrate proceeds from the part of the region of the bond substrate to the other part of the region of the bond substrate in the embrittlement layer. Accordingly, a semiconductor layer is formed over the base substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SOI substrate and manufacturing method thereof","description":"A bond substrate is irradiated with ions, so that an embrittlement layer is formed, then, the bond substrate is bonded to a base substrate. Next, a part of a region of the bonded bond substrate is hea","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476147","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476147","citation_suggestion":"Patentable. \"SOI substrate and manufacturing method thereof\" (US-8476147). https://patentable.app/patents/US-8476147","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476147","json":"https://patentable.app/api/llm-context/US-8476147","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:36:55.380Z"}