{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476151","patent":{"patent_number":"US-8476151","title":"Method for manufacturing nitride semiconductor crystal layer","assignee":null,"inventors":[],"filing_date":"2011-03-01T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor crystal layer. The method can include forming the nitride semiconductor crystal layer having a first thickness on a silicon crystal layer. The silicon crystal layer is provided on a base body. The silicon crystal layer has a second thickness before the forming the nitride semiconductor crystal layer. The second thickness is thinner than the first thickness. The forming the nitride semiconductor crystal layer includes making at least a portion of the silicon crystal layer incorporated into the nitride semiconductor crystal layer to reduce a thickness of the silicon crystal layer from the second thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing nitride semiconductor crystal layer","description":"According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor crystal layer. The method can include forming the nitride semiconductor crystal layer having a first thickn","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476151","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476151","citation_suggestion":"Patentable. \"Method for manufacturing nitride semiconductor crystal layer\" (US-8476151). https://patentable.app/patents/US-8476151","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476151","json":"https://patentable.app/api/llm-context/US-8476151","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:07:49.569Z"}