{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476155","patent":{"patent_number":"US-8476155","title":"Formation of a high-K crystalline dielectric composition","assignee":null,"inventors":[],"filing_date":"2010-07-14T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an “A” element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an “M” crystalline structure. The “A” element about 1 at % to about 5 at % of the total content of the “A” element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a “T” crystalline structure through a phase transition process, wherein the “T” crystalline structure is different from the “M” crystalline structure. An upper layer is formed on the “T” crystalline dielectric."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation of a high-K crystalline dielectric composition","description":"Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an “A” element on an underlyi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476155","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476155","citation_suggestion":"Patentable. \"Formation of a high-K crystalline dielectric composition\" (US-8476155). https://patentable.app/patents/US-8476155","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476155","json":"https://patentable.app/api/llm-context/US-8476155","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:03.391Z"}