{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476157","patent":{"patent_number":"US-8476157","title":"Buried bit line anti-fuse one-time-programmable nonvolatile memory","assignee":null,"inventors":[],"filing_date":"2010-07-22T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["G11C","H01L","H01L","H01L"],"num_claims":8,"abstract":"An anti-fuse one-time-programmable (OTP) nonvolatile memory cell has a P well substrate with two P.sup.−doped regions. Another N.sup.+doped region, functioning as a bit line, is positioned adjacent and between the two P.sup.−doped regions on the substrate. An anti-fuse is defined over the N.sup.+doped region. Two insulator regions are deposited over the two P.sup.−doped regions. An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse. A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line. A programmed region, i.e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed. The array structure of anti-fuse OTP nonvolatile memory cells and methods for programming, reading, and fabricating such a cell are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Buried bit line anti-fuse one-time-programmable nonvolatile memory","description":"An anti-fuse one-time-programmable (OTP) nonvolatile memory cell has a P well substrate with two P.sup.−doped regions. Another N.sup.+doped region, functioning as a bit line, is positioned adjacent an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476157","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476157","citation_suggestion":"Patentable. \"Buried bit line anti-fuse one-time-programmable nonvolatile memory\" (US-8476157). https://patentable.app/patents/US-8476157","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476157","json":"https://patentable.app/api/llm-context/US-8476157","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:55:07.860Z"}