{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476678","patent":{"patent_number":"US-8476678","title":"CMOS Transistor with dual high-k gate dielectric","assignee":null,"inventors":[],"filing_date":"2012-04-11T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. A CMOS device is formed on a workpiece having a first region and a second region. A first gate dielectric material is deposited over the second region. A first gate material is deposited over the first gate dielectric material. A second gate dielectric material comprising a different material than the first gate dielectric material is deposited over the first region of the workpiece. A second gate material is deposited over the second gate dielectric material. The first gate material, the first gate dielectric material, the second gate material, and the second gate dielectric material are then patterned to form a CMOS device having a symmetric Vt for the PMOS and NMOS FETs."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"CMOS Transistor with dual high-k gate dielectric","description":"A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. A CMOS device is formed on a workpiece having a first region and a second region. A first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476678","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476678","citation_suggestion":"Patentable. \"CMOS Transistor with dual high-k gate dielectric\" (US-8476678). https://patentable.app/patents/US-8476678","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476678","json":"https://patentable.app/api/llm-context/US-8476678","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:11:43.170Z"}