{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476695","patent":{"patent_number":"US-8476695","title":"Self aligned narrow storage elements for advanced memory device","assignee":null,"inventors":[],"filing_date":"2010-02-01T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a sub-lithographic charge storage element on a semiconductor substrate is provided. The method can involve providing first and second layers on a semiconductor substrate, a thickness of the first layer being larger than a thickness of the second layer; forming a spacer adjacent a side surface of the first layer and on a portion of an upper surface of the second layer; and removing an exposed portion of the second layer that is not covered by the spacer. By removing the exposed portion of the second layer while leaving a portion of the second layer that is protected by the spacer, the method can make a sub-lithographic charge storage element from the remaining portion of the second layer on the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self aligned narrow storage elements for advanced memory device","description":"A method of forming a sub-lithographic charge storage element on a semiconductor substrate is provided. The method can involve providing first and second layers on a semiconductor substrate, a thickne","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476695","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476695","citation_suggestion":"Patentable. \"Self aligned narrow storage elements for advanced memory device\" (US-8476695). https://patentable.app/patents/US-8476695","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476695","json":"https://patentable.app/api/llm-context/US-8476695","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:09:44.381Z"}