{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476703","patent":{"patent_number":"US-8476703","title":"Three-dimensional semiconductor device structures and methods","assignee":null,"inventors":[],"filing_date":"2011-08-18T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A three-dimensional semiconductor device includes a first semiconductor device, a second semiconductor device, and a patterned conductive layer disposed between the first and the second semiconductor devices. The first semiconductor device has a first plurality of terminals on a front side of the first semiconductor device and a first metal substrate on its back side, wherein one of the first plurality of terminals in the first semiconductor device is electrically coupled to the first metal substrate. The second semiconductor device has a second plurality of terminals on a front side of the second semiconductor device and a second metal substrate on its back side, wherein the second semiconductor device further includes a second metal substrate on its back side. The patterned conductive layer includes a plurality of conductive regions. Each of the conductive regions is bonded to a conductor coupled to one of the first plurality of terminals and another conductor coupled to one of the second plurality of terminals."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional semiconductor device structures and methods","description":"A three-dimensional semiconductor device includes a first semiconductor device, a second semiconductor device, and a patterned conductive layer disposed between the first and the second semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476703","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476703","citation_suggestion":"Patentable. \"Three-dimensional semiconductor device structures and methods\" (US-8476703). https://patentable.app/patents/US-8476703","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476703","json":"https://patentable.app/api/llm-context/US-8476703","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:56:32.568Z"}