{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8476714","patent":{"patent_number":"US-8476714","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-01-12T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"A semiconductor device includes a semiconductor substrate; an n-channel MOS transistor including a first gate insulating film provided on a p-type layer, a first gate electrode made of TiN, and a first upper gate electrode made of semiconductor doped with impurities; and a p-channel MOS transistor including a second gate insulating film provided on an n-type layer, a second gate electrode including at least as a part, a TiN layer made of TiN crystal in which a ratio of (111) orientation/(200) orientation is about 1.5 or more, and a second upper gate electrode made of semiconductor doped with impurities."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes a semiconductor substrate; an n-channel MOS transistor including a first gate insulating film provided on a p-type layer, a first gate electrode made of TiN, and a firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8476714","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8476714","citation_suggestion":"Patentable. \"Semiconductor device\" (US-8476714). https://patentable.app/patents/US-8476714","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8476714","json":"https://patentable.app/api/llm-context/US-8476714","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:11:52.165Z"}