{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8477462","patent":{"patent_number":"US-8477462","title":"CPP device with improved current confining structure and process","assignee":null,"inventors":[],"filing_date":"2012-12-02T00:00:00.000Z","publication_date":"2013-07-02T00:00:00.000Z","cpc_codes":["G11B","B82Y","B82Y","G11B","G11B","G11B"],"num_claims":5,"abstract":"Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"CPP device with improved current confining structure and process","description":"Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a tempera","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8477462","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8477462","citation_suggestion":"Patentable. \"CPP device with improved current confining structure and process\" (US-8477462). https://patentable.app/patents/US-8477462","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8477462","json":"https://patentable.app/api/llm-context/US-8477462","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:07.929Z"}