{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8481345","patent":{"patent_number":"US-8481345","title":"Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices","assignee":null,"inventors":[],"filing_date":"2010-09-27T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices","description":"A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8481345","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8481345","citation_suggestion":"Patentable. \"Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices\" (US-8481345). https://patentable.app/patents/US-8481345","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8481345","json":"https://patentable.app/api/llm-context/US-8481345","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:51:08.449Z"}