{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8481373","patent":{"patent_number":"US-8481373","title":"Method for manufacturing thin film transistor substrate","assignee":null,"inventors":[],"filing_date":"2010-03-16T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G02F"],"num_claims":11,"abstract":"A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode (11a) and a first interconnect on a substrate (10), a step of forming a gate insulating film (12a) having a contact hole at a position overlapping the first interconnect, a step of forming a source electrode (13a) and a drain electrode (13b) overlapping the gate electrode (11a) and separated apart from each other, and a second interconnect connected via the contact hole to the first interconnect, a step of successively forming an oxide semiconductor film (14) and a second insulating film (15), and thereafter, patterning the second insulating film (15) to form an interlayer insulating film (15a), and a step of reducing the resistance of the oxide semiconductor film (14) exposed through the interlayer insulating film (15a) to form a pixel electrode (14b)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing thin film transistor substrate","description":"A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode (11a) and a first interconnect on a substrate (10), a step of forming a gate insulating film (12","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8481373","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8481373","citation_suggestion":"Patentable. \"Method for manufacturing thin film transistor substrate\" (US-8481373). https://patentable.app/patents/US-8481373","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8481373","json":"https://patentable.app/api/llm-context/US-8481373","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:46:49.219Z"}