{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8481381","patent":{"patent_number":"US-8481381","title":"Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures","assignee":null,"inventors":[],"filing_date":"2011-09-14T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"When forming high-k metal gate electrode structures in a semiconductor device on the basis of a basic transistor design, undue exposure of sensitive materials at end portions of the gate electrode structures of N-channel transistors may be avoided, for instance, prior to and upon incorporating a strain-inducing semiconductor material into the active region of P-channel transistors, thereby contributing to superior production yield for predefined transistor characteristics and performance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures","description":"When forming high-k metal gate electrode structures in a semiconductor device on the basis of a basic transistor design, undue exposure of sensitive materials at end portions of the gate electrode str","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8481381","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8481381","citation_suggestion":"Patentable. \"Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures\" (US-8481381). https://patentable.app/patents/US-8481381","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8481381","json":"https://patentable.app/api/llm-context/US-8481381","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:24:16.346Z"}