{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8481382","patent":{"patent_number":"US-8481382","title":"Method and apparatus for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2012-11-13T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"The present invention provides a method and apparatus for manufacturing a semiconductor device using a PVD method and enabling achievement of a desired effective work function and reduction in leak current without increasing an equivalent oxide thickness. A method for manufacturing a semiconductor device in an embodiment of the present invention includes the steps of: preparing a substrate on which an insulating film having a relative permittivity higher than that of a silicon oxide film is formed; and depositing a metal nitride film on the insulating film. The metal nitride depositing step is a step of sputtering deposition in an evacuatable chamber using a metal target and a cusp magnetic field formed over a surface of the metal target by a magnet mechanism in which magnet pieces are arranged as grid points in such a grid form that the adjacent magnet pieces have their polarities reversed from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and apparatus for manufacturing semiconductor device","description":"The present invention provides a method and apparatus for manufacturing a semiconductor device using a PVD method and enabling achievement of a desired effective work function and reduction in leak cu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8481382","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8481382","citation_suggestion":"Patentable. \"Method and apparatus for manufacturing semiconductor device\" (US-8481382). https://patentable.app/patents/US-8481382","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8481382","json":"https://patentable.app/api/llm-context/US-8481382","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:15:32.349Z"}