{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8481414","patent":{"patent_number":"US-8481414","title":"Incorporating impurities using a discontinuous mask","assignee":null,"inventors":[],"filing_date":"2011-04-08T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":28,"abstract":"Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating impurities into a material using a discontinuous mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Incorporating impurities using a discontinuous mask","description":"Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating impurities in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8481414","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8481414","citation_suggestion":"Patentable. \"Incorporating impurities using a discontinuous mask\" (US-8481414). https://patentable.app/patents/US-8481414","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8481414","json":"https://patentable.app/api/llm-context/US-8481414","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:45.149Z"}