{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8481415","patent":{"patent_number":"US-8481415","title":"Self-aligned contact combined with a replacement metal gate/high-K gate dielectric","assignee":null,"inventors":[],"filing_date":"2010-12-02T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A method of forming a semiconductor device is provided that includes forming a replacement gate structure on portion a substrate, wherein source regions and drain regions are formed on opposing sides of the portion of the substrate that the replacement gate structure is formed on. An intralevel dielectric is formed on the substrate having an upper surface that is coplanar with an upper surface of the replacement gate structure. The replacement gate structure is removed to provide an opening to an exposed portion of the substrate. A high-k dielectric spacer is formed on sidewalls of the opening, and a gate dielectric is formed on the exposed portion of the substrate. Contacts are formed through the intralevel dielectric layer to at least one of the source region and the drain region, wherein the etch that provides the opening for the contacts is selective to the high-k dielectric spacer and the high-k dielectric capping layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned contact combined with a replacement metal gate/high-K gate dielectric","description":"A method of forming a semiconductor device is provided that includes forming a replacement gate structure on portion a substrate, wherein source regions and drain regions are formed on opposing sides ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8481415","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8481415","citation_suggestion":"Patentable. \"Self-aligned contact combined with a replacement metal gate/high-K gate dielectric\" (US-8481415). https://patentable.app/patents/US-8481415","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8481415","json":"https://patentable.app/api/llm-context/US-8481415","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:19:51.095Z"}