{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8481431","patent":{"patent_number":"US-8481431","title":"Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the same","assignee":null,"inventors":[],"filing_date":"2011-06-16T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A method for opening a one-side contact region of a vertical transistor is provided. The one-side contact region of the vertical transistor is opened using a polysilicon layer, a certain portion of which can be selectively removed by a selective ion implantation process. In order to selectively remove the polysilicon layer formed on one of both sides of an active region, at which the one-side contact is to be formed, impurity ion implantation is performed in a direction vertical to the polysilicon layer by a plasma doping process, and a tilt ion implantation using an existing ion implantation process is performed. In this manner, the polysilicon layer is selectively doped, and the undoped portion of the polysilicon layer is selectively removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the same","description":"A method for opening a one-side contact region of a vertical transistor is provided. The one-side contact region of the vertical transistor is opened using a polysilicon layer, a certain portion of wh","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8481431","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8481431","citation_suggestion":"Patentable. \"Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the same\" (US-8481431). https://patentable.app/patents/US-8481431","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8481431","json":"https://patentable.app/api/llm-context/US-8481431","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:15:27.439Z"}