{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482009","patent":{"patent_number":"US-8482009","title":"Silicon-on-insulator substrate with built-in substrate junction","assignee":null,"inventors":[],"filing_date":"2011-04-25T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; ion-implanting hydrogen through the oxide layer into the first substrate, to form a fracture zone in the substrate; forming a doped dielectric bonding layer on a silicon second substrate; bonding a top surface of the bonding layer to a top surface of the oxide layer; thinning the first substrate by thermal cleaving of the first substrate along the fracture zone to form a silicon layer on the oxide layer to formed a bonded substrate; and heating the bonded substrate to drive dopant from the bonding layer into the second substrate to form a doped layer in the second substrate adjacent to the bonding layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-on-insulator substrate with built-in substrate junction","description":"A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482009","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482009","citation_suggestion":"Patentable. \"Silicon-on-insulator substrate with built-in substrate junction\" (US-8482009). https://patentable.app/patents/US-8482009","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482009","json":"https://patentable.app/api/llm-context/US-8482009","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:03:39.189Z"}